Research areas:

My group’s research goals are to: (i) develop active solid-state based THz devices that can be employed in compact, low cost communication and imaging systems, and (ii) investigate new materials and devices as well as non-traditional physical phenomena for THz and optoelectronic applications.  The THz band is the broad region of the electromagnetic spectrum separating radio and optical waves.  From an application point of view, THz has been historically one of the least explored regions of the spectrum. This can be understood on the basis that these waves have been notoriously difficult to produce, control and detect. Although significant scientific progress has been recently achieved, enhancing our understanding on the interplay between THz waves and matter and how these interactions can be tailored to generate and harness THz waves still remains a major challenge. My group’s work is framed into these efforts by trying to develop and demonstrate THz optoelectronic device concepts based on metamaterials, non-traditional electron transport phenomena such as plasmonics and tunneling, and new materials such as graphene, complex oxides, and topological insulators.  Our research expertise goes from theory to experiment, including computational modeling of materials and devices, materials growth, device fabrication, and device characterization.  We have equipment for CVD materials growth, THz CW and time-domain spectroscopy, DC and RF characterization (mmwave probe station + VNA with 67-110GHz frequency extenders), and we collaborate with groups growing complex oxides by MBE, III-N heterostructures by MBE, and thin films via pulsed laser deposition.

graphene2Sketch of the band structure of graphene

Research projects:

  • NSF #1407959 ECCS: Closing the THz gap with a new family of devices based on two-dimensional materials (09/2014-08/2018), (PI).
  • NSF #1351389 CAREER: THz active metamaterials employing thin-film semiconductors (01/2014-12/2018), (PI).
  • ONR #N00014-11-1-0721 MURI: DATE device and architectures for terahertz electronics (08/2013-12/2017), (UofU PI; PI P. Fay, UND).
  • NSF #1121252 MRSEC: Plasmonics and Organic Spintronics (09/2013-08/2018).
  • NSF #1644592 EAGER: Ultra-High-Performance Terahertz Detection Exploiting Super-Steep-Subthreshold-Slope (S4)-FinFETs (08/2016-07/2018), (co-PI; PI P.E. Gaillardon, UofU).
  • AFOSR: AlGaN & AlGaN-based quantum wells: towards high-frequency high-power electronics (07/2018-06/2021), (PI).
  • AFOSR MURI: Fundamentals of Doping and Defects in Ga2O3 for High Breakdown Field Electronics (2018-2021), (co-PI; PI M. Scarpulla, UofU).


            NSF MRSEC ONR  AFOSR


  • Prof. Ajay Nahata (University of Utah)
  • Prof. Steve Blair (University of Utah)
  • Prof. Ashutosh Tiwari (University of Utah)
  • Prof. Vikram Deshpande (University of Utah)
  • Prof. Bharat Jalan (University of Minnesota)
  • Prof. Anthony Hoffman (University of Notre Dame)
  • Prof. Huili Grace Xing (Cornell University)
  • Prof. Jose Capmany (Universidad Politecnica de Valencia)
  • Prof. Pierre-Emmanuel Gaillardon (University of Utah)
  • Prof. Patrick Fay (University of Notre Dame)
  • Prof. John Volakis (Ohio State University)
  • Prof. Michael Scarpulla (University of Utah)
  • Prof. Rajesh Menon (University of Utah)
  • Prof. Leonardo Barboni (Universidad de la Republica)
  • Prof. Jandro Abot (Catholic University of America)
  • Prof. David Estrada (Boise State University)
  • Prof. Debdeep Jena (Cornell University)

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